| 摘要 |
A sensing circuit for a dynamic random access memory of which bit lines at reference side are temporarily connected to a large load capacitance or to a precharge power source when a read operation is performed. Thereby, change in electric potential of the bit lines at the reference side occurring due to interference noises between the bit lines at the time of effecting a read operation of reading the contents of a memory cell, as well as, deterioration of a signal-to-noise ratio due to the change in electric potential of the bit lines can be effectively suppressed.
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