| 摘要 |
A MESFET device is provided wherein the top Schottky gate is electrically isolated from the bottom gate. Methods as described for forming channels self aligned to Schottky top gates and complementary junction field effect transistors. A method is also described for adjusting or trimming the voltage to current characteristics of a MESFET by applying current pulses to the gate and through the channel to create conductive regions between the top and bottom gate. Dual segment gates or sources or drains may be provided to reduce the trimming current and appropriate steering circuitry also provided. This technique may be used to adjust individual MESFETs, as well as current followers, differential amplifiers and other circuits which would be designed to include MESFETs.
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