| 摘要 |
A semiconductor chip (14) is bonded to a substrate (16) by a metallic molecular bond interface (28, 38, 30). The chip and the substrate are separated by a gap (18), and a metal-bearing gas is introduced in the gap. A thermal energy source (22) directs a focused energy beam (24) into the gap to thermally decompose the gas by chemical vapor reaction to deposit and grow metal to provide a metallic molecular bond interface filling the gap and bonding the chip to the substrate. In the preferred embodiment, one of the chip and substrate has a passband passing the wavelength of the focused beam to be transparent thereto such that the beam passes therethrough and into the gap and against the other of the chip and the substrate.
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