发明名称 INSULATED-GATE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent a latch-up phenomenon and a latch-back phenomenon from being caused by specifying a ratio of an interval between adjacent base regions of a part close to a part to which a connecting conductor of a main electrode has been fixed and bonded to a width of a base region in a direction toward the interval. CONSTITUTION:A width Lw2 of a p-base region 3 under a bonding part of a conductor 11 such as an Al wire or the like bonded to an emitter electrode 9 is made nearly identical to a width Lw1 of a p-base region which is distant from a bonding part. An interval Lg2 between adjacent p-base regions directly under the bonding part is made smaller than an interval Lg1 between regions which are distant from the bonding part. In this case, Lg/Lw is set to a range of 0.2 to 0.4.</p>
申请公布号 JPH0396282(A) 申请公布日期 1991.04.22
申请号 JP19890233619 申请日期 1989.09.08
申请人 FUJI ELECTRIC CO LTD 发明人 SAKURAI KENYA
分类号 H01L29/78;H01L29/10;H01L29/739 主分类号 H01L29/78
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