| 摘要 |
<p>PURPOSE:To form a fine electron-emitting element of field emission type by irradiating crystal material with a focusing ion beam along a race track formation, and chemically removing only an ion implanting portion. CONSTITUTION:A base 101 of insulating material is irradiated with a focusing ion beam along a race track formation set on the surface thereof to form a water drop type ion implanting region 105, and the base 101 is subjected to chemical etching treatment to remove the region 105 to form an electric field forming space 106 having a protrusion 108 provided on its bottom. Next, tungsten etc., is vacuum deposited to the surface of a sample in the vertical direction to form a conductive extension electrode 109, conductive electrode wiring and a conductive point electron-emitting portion 111, thereby forming a fine electron- emitting element of field emission type of less than 3mu.</p> |
