发明名称 NON-VOLATILE MEMORY
摘要 PURPOSE:To store analog information easily by injecting hot carriers to a floating electrode while crossing the energy barrier of an insulating film covering the floating electrode. CONSTITUTION:Electrodes 13, 14 for injecting charges generating hot carriers by a tunnel effect, a control electrode 1 for setting tunnel voltage mounted among the electrodes 13, 14 for injecting the charges and a floating electrode 2 and an insulating film 3 shaped between the control electrode 1 and the floating electrode 2 are provided. Hot carriers are injected to the floating electrode while crossing the energy barrier of the insulating film 3 covering the floating electrode 2. Accordingly, a non-volatile memory in which an analog value is stored easily can be constituted.
申请公布号 JPH0394474(A) 申请公布日期 1991.04.19
申请号 JP19900097578 申请日期 1990.04.16
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MORIE TAKASHI
分类号 G11C17/00;G11C16/02;G11C16/04;G11C27/00;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C17/00
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