| 摘要 |
PURPOSE:To increase node capacity to improve alpha-ray capacitance without increase in size of a memory cell by a method wherein at least a part of a source and a drain is in contact with a buried layer. CONSTITUTION:A P<+>-type buried layer 2 is formed on the surface of a P-type semiconductor substrate 1 while a field film 4 is formed on the surface of a P<-> well 3 formed on an N-type epitaxial layer grown on the buried layer 2. Then a deep N<+>-type diffusion layer 5a to be a source drain is formed. The N<+> diffusion layer 5 reaches a P<+> buried layer 7 to constitute P<+>-N<+> junction. A gate electrode 7 composed of polysilicon is formed with a gate oxide film 6 between while a resistor element 9 composed of polysilicon is formed through an opening of an interlayer insulation film 8 to form Al wiring through an opening of a surface protective film 10 and a flattened film 22. |
