| 摘要 |
<p>PURPOSE:To prevent formation of capacity between a gate electrode and a source and a drain electrodes so as to reduce voltage drop at gate line by a method wherein a gate electrode is formed of n-type semiconductor while this is connected to a gate line made of metal. CONSTITUTION:A gate electrode 12 is connected to a gate line 13 while it is formed of n-type semiconductor made of n-type amorphous silicon. The electrode 12 and the line 13 sequentially deposit the n-type semiconductor and metal such as chrome, and after the deposition film is patterned in the shape of the line 13, the deposition film of the n-type semiconductor is patterned in the shape of the electrode 12. If the electrode 12 is made of the n-type semiconductor, a source and a drain electrodes 17, 18 are metal electrodes, and even if the electrode 12 and the electrodes 17, 18 are vertically opposite, no capacity is formed between the electrode 12 and the electrodes 17, 18.</p> |
