| 摘要 |
<p>PURPOSE:To eliminate the short circuit by the oozing between the resistance films adjoining each other, and to make it possible to arrange the resistance films in the state of high density by a method wherein the resistance films, which are independent of one another, formed by dividing an insulating film having a large area by a laser beam, are obtained. CONSTITUTION:A resistance film 6, having a large area astriding a plurality of terminal electrodes 1 and 2, is formed on an insulating substrate 3 in advance, then the resistance film 6 is divided in a prescribed position by a laser beam, and independently formed insulating films 7a to 7d, which are connected to the terminal electrodes 1 and 2, are obtained. Then, resistance films 7a to 7d are adjusted to the prescribed resistance value by trimming grooves 8a to 8d. As a result, the adjacently positioned resistance films do not short-circuit even when they are arranged in high density, and a small type chip R network can be formed.</p> |
