| 摘要 |
PURPOSE:To contrive an increase in a degree of freedom in the logical modification of a wiring by a method wherein a point on a wiring pattern in the air over a point to be cut on a wiring pattern is also cut simultaneously with the point to be cut, an insulation work is performed on the targeted cut point and a metal film is formed on the cut point in the air over. CONSTITUTION:In case a point 102 on a wiring pattern is cut, a microion beam 4 or the like is irradiated from over the wiring pattern to cut the point 102 on the pattern. At this time, a point 101 on a wiring pattern located above the point 102 is also simultaneously cut up. Moreover, an insulator film 103 is formed on the base part of a hole opened by the beam 4 and the point 102 on the wiring pattern is subjected to insulation work. After that, a metal film 104 is formed on the part of the hole in the excessively cut point 101 by a laser CVD method or the like and wiring patterns 105 and 106, which are respectively located at both ends of the point 101, are connected to each other by the film 104. Thereby, the case of case of an impossibility of repair due the conditions of wiring can be eliminated and the logical modification of a wiring can be freely performed. |
