METHOD OF FORMING VERTICAL TYPE SUPERLATTICE OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To make it possible to form a vertical type superlattice, on which an AC layer and a BC layer are arranged, by a method wherein an A atom layer is formed on a part of the terrace width of the atom step of a substrate by controlling both feeding method of raw gas and film-growth conditions, and after a B atom layer has been formed on the remaining part, C atoms are adsorbed onto the A atom layer and the B atom layer. CONSTITUTION:First, an A-atom layer 11 is grown on a part of the terrace width of atom step of a crystal substrate 1 by controlling the feeding method of each raw gas A, B and C atoms and growth conditions, and then a B-single atom layer 12 is grown on the remaining part. C-atoms are adsorbed into an A monoatomic layer 11 and a B monoatomic layer 12, and an AC monomolecular layer 13 and a BC monomolecular layer 14 are formed. Accordingly, the growth and formation of the BC monomolecular layer exceeding the terrace width of atom step is prevented, and also as the above-mentioned layer is not formed shorter than the terrace width, one of the interface of AC/BC is especially made flat, and it is formed vertical to the crystal substrate without fail. As a result, a vertical type superlattice, which is orthogonal to the crystal substrate 1 and having excellent interfacial flatness, can be formed.