| 摘要 |
PURPOSE: To avoid bonding spikes and contact deterioration by forming bothside polysilicon pads on the field oxide areas of a semiconductor and installing conductive strips between the upper sides of the pads and an adjacent diffused area, so as to establish electrical contact with the conductive strips on the upper sides of the pads. CONSTITUTION: Polysilicon pads 49, 51 and 53 are installed on field oxide regions 31, 33 and 42 adjacent to a source 59 and a drain diffused region 61 of a semiconductor substrate 11. Next it is coated with a metal 65 such as platinum, palladium, and furthermore coated with a reactive layer 66 such as noncrystal silicon. After etching the layer 66 and forming strips 67 and 69, the metal is next made to react with strips 67 and 69 and the substrate to form first and second silicide conductors 75 and 77 respectively, in contact with the source area 59 and the drain area 61. Thereby adverse effects such as the problems of bonding spikes and contact etch strips are avoided. |
