发明名称 |
Process for improved contact stud structure for semiconductor devices |
摘要 |
A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transistion metal and the seed and filler layers are refractory metals.
|
申请公布号 |
US5008216(A) |
申请公布日期 |
1991.04.16 |
申请号 |
US19890448484 |
申请日期 |
1989.12.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HUANG, HUNG-CHANG W.;TOTTA, PAUL A. |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|