MANUFACTURE OF FILM TRANSISTOR

摘要

PURPOSE:To reduce the cost by accumulating an upper insulating film and a light shielding film before the patterning of a semiconductor layer, and patterning the light shielding film and the upper insulating film in the same shape, and also patterning the semiconductor layer exposed by this patterning into the shape of a transistor element with source and drain electrodes as masks. CONSTITUTION:A metallic film is accumulated on a transparent substrate 1 and is patterned so as to form an electrode 12, and then an insulating film 13 consisting of SiN, a semiconductor layer 14 consisting of i-a-Si, an n-type semiconductor layer 15 consisting of n<+>-a-Si, and a metallic film 16 are accumulated in order by plasma CVD method. Next, a metallic film 16 is patterned so as to form electrodes 16a and 16b, and then an ntype semiconductor layer 5 is patterned into the shapes of the electrodes 16a and 16b. Next, an upper insulating film 17 consisting of silicon nitride and a light shielding film 18 are accumulated in order. Next, after patterning the light shielding film 18 and the upper insulating film 17 into specified shapes, with the resist mask on the light shielding film 16 left, the exposed semiconductor layer 14 is etched, and is patterned into the shape of a transistor element. After that a transparent picture element electrode 20 is formed on the gate insulating film 13 with its one end superposed on the electrode 16.