Packaged diode for high temperature operation

摘要

The invention is a packaged diode suitable for operation at temperatures above 200 DEG C. and during temperature excursions between -65 DEG C. and at least 350 DEG C. The invention comprises a diode having respective p-n portions with a p-n junction therebetween, and formed of a semiconductor material that is stable and will exhibit satisfactory diode characteristics at such temperatures. Ohmic contacts are made to the opposite sides of the junction diode and to the respective p and n portions of the diode. An electrode adjacent each of the ohmic contacts is formed of an electrically conductive material that has a coefficient of thermal expansion similar to the coefficient of thermal expansion of the semiconductor material for providing structural support to the junction diode and electrical contact therewith. A lead contacts each of the electrodes opposite each electrode's contact with the diode. Each lead is formed of an electrically conductive material and is joined to the respective electrode by an alloy that likewise remains physically and electrically stable at temperatures greater than 200 DEG C. and during repetitive operating cycles over temperature excursions between about -65 DEG C. and 350 DEG C. A packaging material surrounds the junction diode and portions of the electrode to hermetically seal it.