| 摘要 |
PURPOSE:To reduce leakage current and achieve high integration where fluctuation of wavelength during phase modulation is reduced remarkably by forming the electrode at a light-emitting element part over a range which is wider than the distribution feedback region having a diffraction grid. CONSTITUTION:A separation region 10 which separates the electrode 7 at a light-emitting element part from the electrode 8 at a phase modulator part is located at the phase modulator side as compared with the edge of a diffraction grid in a light-emitting element region. Thus sort of structure prevents current flow from the electrode 8 from flowing to the light-emitting element part in constant state, thus obtaining an integrated optical semiconductor element having extremely small wavelength fluctuation during phase modulation. |
