| 摘要 |
PURPOSE:To make the thickness of a pasting means uniform by making it includes a die-bonding region which is the region to paste a heat sensitive quickly changing element, and where a cell is not formed and a surface protective film is not applied. CONSTITUTION:In the die-bonding region 8 of a MOSFET 1, a P-well region 9, a P<+>-well region 10, a high concentration N<+> source region 11, a gate 13 covered with a gate oxide film 12, etc., and a source 14 are not formed. It is a constitution in which a surface protective film 15 is not formed, either. A thin oxide insulating film 21 made of a silicon oxide, etc., is formed on the N epitaxial layer 4 in the die-bonding region 8. This oxide insulating film 21 is made at the same time as formation of a gate oxide film 12 which is a high quality insulating film uniform in thickness. Accordingly, the surface of the die-bonding region 8 can be maintained flat, and since neither the surface oxide film 15 nor the cell is formed in the die-bonding region 8, the heat generated in a bulk layer is transmitted immediately to the surface of the oxide insulating film 21. A 'Posistor(R)' 2 is pasted through insulating epoxy 3 to the topside of an oxide insulating film 21 in the die-bonding region 8. Hereby, the thickness of a pasting means can be made uniform, and the chip temperature can be transmitted uniformly and quickly to a heat sensitive quickly changing element. |
