| 摘要 |
<p>PURPOSE:To obtain an optoelectronic IC(OEIC) associated with a PD, a FET having equivalent performance to that of a single device by respectively composing a PD crystal and a FET crystal of InP and GaAs, vertically laminating them, diffusing it through the FET crystal, and electrically connecting from the surface to the PD. CONSTITUTION:An n-type InGaAs photodetecting layer 1, an n-type InP layer 2 are grown on an n-type InP substrate 10 by an MOCVD method, etc. Then, a high resistance AlGaAs layer 3, an n-type GaAs layer 4 are formed by an MBE method, etc. They may be grown simultaneously by the MOCVD. A buffer layer may be inserted between these layers. Then, part of the surface of the crystal is so diffused with an SiN film or the like that Zn reaches from the surface to the n-InGaAs photodetecting layer 1 to form a Zn-diffused region 80. Eventually, electrodes 60-63 of a PD, a FET are formed to complete the OEIC.</p> |
