| 摘要 |
PURPOSE:To reduce the vertical stepped portion due to an interlayer insulating film of each polycrystalline silicon layer at an aluminum wiring contact part and hence improve step coverage of the aluminum wiring by providing a process of removing the interlayer film between wiring layers except the part which required dielectric strength. CONSTITUTION:SiO2 for example is deposited by a CVD process to form a first interlayer insulating layer 11. Then, a polyside structure second wiring layer 2 is deposited on the first interlayer insulating layer 11 for patterning. Thereupon, there is removed part of the second interlayer insulating layer 14 except the portion required for dielectric strength between the second wiring layer 2 and a third wiring layer 15. Hereby, there can be reduced the vertical stepped portion of a contact hole on the side of the second wiring layer 2 side where an aluminum contact is formed, thus ensuring satisfactory step coverage. |
