| 摘要 |
PURPOSE:To obtain a polycrystalline silicon thin film which is formed at relatively low temperature and has a large crystal particle size by utilizing high- concentration dopant as a nucleus for crystal growing. CONSTITUTION:High-concentration dopant is contained at a position at least 100Angstrom from a substrate surface 1, more preferably at a position 200Angstrom from the surface. The concentration of the dopant is 10<18>/cm<3> or more, or more preferably 5X10<18>/cm<3> or more. When the highconcentration dopant is incorporated in the vicinity of the substrate 1 in this way, the crystal particle size of a silicon thin film thereon largely grows, and the size of at least 0.2-0.5mum can be obtained. The size of 0.5mum or more can be readily obtained. Furthermore, the size of 0.8-1mum or more can be obtained by growing. In this way, the polycrystalline silicon thin film having the excellent electric characteristics can be readily obtained at relatively low temperature. |
