| 摘要 |
PURPOSE:To obtain the developing soln. which forms resist patterns having a high residual film rate without having surface layer peeling and film residues by adding a specific alkali soluble resin and org. reducing compd. to the developing soln. for the positive type photoresist essentially consisting of a basic compd. CONSTITUTION:One kind of the alkaline soluble resin selected from a novolak resin, acetone-pyrogallol resin, polyhydroxy styrene and the deriv. thereof and the org. reducing compd., such as hydrazine, hydrazide, carbazete, semicarbazide, guanidine, hydroxamic acid, hydroxyurea or glucose, are added at prescribed ratios to the developing soln. for the positive type photoresist consisting of the basic compd. which consists of one of tetramethyl ammonium hydroxide and trimethyl (2-hydroxyethyl)ammonium hydroxide as its essential components. The excellent positive type photoresist patterns are formed if the developing soln. constituted in such a manner is used. |
