Memory device.

摘要

A high speed dual-port burst access memory (BAM) is disclosed that is capable of operating in both a burst access mode and random access mode simultaneously. The architecture of the high speed BAM permits random or burst access read or write operations on one port while simultaneously supporting sequential reading or writing in a burst or random mode of operation on a second port. Burst access can also be stopped and restarted for any number of clock cycles independently at each port. The BAM can also be configured as a high speed FIFO.