| 摘要 |
<p>PURPOSE:To enable the position of an N<+>P<+> junction to be shallow by allowing an N<+> diffusion layer to be diffused through a polysilicon layer. CONSTITUTION:An N<++> buried layer 2 is formed on a P substrate 1 for enabling an N epitaxial layer 3 to be grown on the surface and a P<+> diffusion layer 5, and a P diffusion layer 6 for achieving contact of electrode for the P<+> diffusion layer are formed within an epitaxial island where the epitaxial layer 3 is separated by an isolation diffusion layer 4. Then, an opening for enabling an N<+> diffusion layer 7 is provided at an SiO2 film on the surface, a polysilicon layer 10 is formed on the surface, an area other than the one covering the opening of the polysilicon layer 10 is subjected to etching-elimination, the N<+> diffusion layer 7 is diffused through the silicon layer 10, the polysilicon layer 10 is subjected to etching-elimination when diffusion ends, and then an electrode contact etc., is formed by a method which is same as the conventional one.</p> |
