发明名称 THIN-FILM SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To obtain a high contrast ratio of a display and improved display characteristics even when light is irradiated onto a rear surface by forming light-screening layers on a transparent substrate and at both sides of a gate electrode with some distance to the gate electrode for reducing increase in OFF-current when light is irradiated onto the rear surface. CONSTITUTION:A gate electrode 2 is subjected to patterning on the upper surface of a glass substrate (transparent substrate) 1 and then a pair of right and left light-screening layers 3, 3 are subjected to patterning at both sides of the gate electrode 2 with a certain distance T. The distance T is provided to prevent the gate electrode 2 from contacting the light-screening layers 3, 3 electrically. Also, this gate electrode 2 and the light-screening layers 3, 3 consist of same material, i.e., Cr, and have same film thickness but may be formed of Mo, Ta, Al, or NiCr film or a lamination film of these. Also, the light-screening layers 3, 3 are grounded to prevent increase in so called parasitic capacity.</p>
申请公布号 JPH0385768(A) 申请公布日期 1991.04.10
申请号 JP19890223890 申请日期 1989.08.30
申请人 SUMITOMO METAL IND LTD 发明人 IKEDA NAOKI
分类号 G02F1/136;G02F1/1368;H01L29/78;H01L29/786 主分类号 G02F1/136
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