发明名称 Process and apparatus for producing transparent conductive film.
摘要 <p>In a process for producing an In-O or In-Sn-O based transparent conductive film by a sputtering process, a sputtering is effected in such a condition that the intensity of a magnetic field on a surface of a target is adjusted in a range of 400 Oe or more so that the sputtering voltage, during sputtering film formation operation, is kept constant. An apparatus for procuding an In-O or In-Sn-O based transparent conductive film on a substrate 4 by a plasma discharge generated between the substrate 4 and a target 8, both of which are mounted in opposition to each other within a vacuum chamber 1, comprises an electromagnet 10 for adjusting the intensity of a magnetic field on the surface of the target 8 is provided on the rear surface side of the target 8, and a controller 13 for controlling the electric current supplied to the electromagnet 10, in accordance with a change in sputtering voltage, is so provided as to be connected to a DC power supply source 9 for the electromagnet 10.</p>
申请公布号 EP0421015(A1) 申请公布日期 1991.04.10
申请号 EP19890118603 申请日期 1989.10.06
申请人 NIHON SHINKU GIJUTSU KABUSHIKI KAISHA 发明人 NAKAMURA, KYUZO C/O NIHON SHINKU GIJUTSU K.K.;ISHIBASHI, SATORU C/O NIHON SHINKU GIJUTSU K.K.;OTA, YOSHIFUMI C/O NIHON SHINKU GIJUTSU K.K.;HIGUCHI, YASUSHI C/O NIHON SHINKU GIJUTSU K.K.
分类号 C23C14/08;C23C14/35;C23C14/54 主分类号 C23C14/08
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