发明名称 |
Process and apparatus for producing transparent conductive film. |
摘要 |
<p>In a process for producing an In-O or In-Sn-O based transparent conductive film by a sputtering process, a sputtering is effected in such a condition that the intensity of a magnetic field on a surface of a target is adjusted in a range of 400 Oe or more so that the sputtering voltage, during sputtering film formation operation, is kept constant. An apparatus for procuding an In-O or In-Sn-O based transparent conductive film on a substrate 4 by a plasma discharge generated between the substrate 4 and a target 8, both of which are mounted in opposition to each other within a vacuum chamber 1, comprises an electromagnet 10 for adjusting the intensity of a magnetic field on the surface of the target 8 is provided on the rear surface side of the target 8, and a controller 13 for controlling the electric current supplied to the electromagnet 10, in accordance with a change in sputtering voltage, is so provided as to be connected to a DC power supply source 9 for the electromagnet 10.</p> |
申请公布号 |
EP0421015(A1) |
申请公布日期 |
1991.04.10 |
申请号 |
EP19890118603 |
申请日期 |
1989.10.06 |
申请人 |
NIHON SHINKU GIJUTSU KABUSHIKI KAISHA |
发明人 |
NAKAMURA, KYUZO C/O NIHON SHINKU GIJUTSU K.K.;ISHIBASHI, SATORU C/O NIHON SHINKU GIJUTSU K.K.;OTA, YOSHIFUMI C/O NIHON SHINKU GIJUTSU K.K.;HIGUCHI, YASUSHI C/O NIHON SHINKU GIJUTSU K.K. |
分类号 |
C23C14/08;C23C14/35;C23C14/54 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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