| 摘要 |
PURPOSE:To obtain a semiconductor device wherein the capacitance of a memory cell does not decrease even if the micronization of a device advances by adding a three-dimensional capacitor to a planar cell. CONSTITUTION:An upper electrode is always earthed to GND, and the transfer gate transistor of the word line of a specified address turns on a signal entering through a bit line by a ROW address signal, and charge is accumulated through the lower electrode of the three-dimensional memory cell (oxide film) of a capacitor (oxide film) 2 and HIC capacitor. When reading out charge, the transfer gate transistor 3 of a specified address becomes ON by a ROW address signal, and the charge entering the memory cell is pulled out to the bit line 4, and is output being amplified through I/O or an amplifier. |
