| 摘要 |
PURPOSE:To improve sensitivity and resolving power by generating a difference in the content and film thickness of silicon in the exposed part and unexposed part of a resist by silylation and executing development by oxygen plasma etching by utilizing this difference. CONSTITUTION:The difference in the concn. and film thickness of the silicon is generated between the exposed part and the unexposed part if the resist formed by combining tetrahydropyranyl etherified polyhydroxy styrene which is a chemical amplifying system and a photoacid generating agent is used and when the silylation by vapor diffusion is executed under heating. Patterns are formed by the oxygen plasma etching in which the above-mentioned difference is utilized. The development by the oxygen plasma with the high sensitivity and the excellent resolving power is executed in this way. |
