ETCHING OF SEMICONDUCTOR DEVICE OF INTEGRATED CIRCUIT

摘要

PURPOSE: To make it possible to prevent the sepn. of a photoresist material from a dielectric substance during the course of etching by selecting a material of the additional layer to be deposited on this dielectric substance in such a manner as to increase the fixability of a photoresist layer and to remain without substantially receiving the influence during anisotropic etching. CONSTITUTION: The thin layer of an adhesive material is held as a binder between the dielectric substance 11 and the photoresist layer 13 in the two-stage etching process for forming inclined contact or interconnection openings in the dielectric substance 11. Such material is so selected as to remain substantially completely during the undercut partial etching of the dielectric substance 11. As a result, the photoresist layer 13 is exactly arranged at the time of executing anisotropic etching through the remaining thickness of the dielectric substance 11 as a result of the increased fixability.