| 摘要 |
A semiconductor memory device having a semiconductor substrate includes; a field oxide layer selectively formed on the semiconductor substrate, and a capacitor including an insulating layer formed on the surface of a trench formed in such a manner that at least an edge portion of the field oxide layer is removed. A conductive layer is formed on the insulating layer, a dielectric layer is formed on the conductive layer and an electrode is formed on the dielectric layer.
|
