发明名称 |
Transistor manufacturing process using three-step base doping |
摘要 |
In a transistor fabrication process, the use of a three-step base doping technique enables the characteristics of a vertical bipolar transistor to be controllably reproduced at highly optimal values from run to run. Insulating spacers (52A) are employed in forming a self-aligned base contact zone (58B). A shallow emitter (46) is created by outdiffusion from a patterned non-monocrystalline semiconductor layer (38A) that serves as the emitter contact. The fabrication process is compatible with the largely simultaneous manufacture of an insulated-gate field-effect transistor of the lightly doped drain type.
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申请公布号 |
US5006476(A) |
申请公布日期 |
1991.04.09 |
申请号 |
US19890440456 |
申请日期 |
1989.11.20 |
申请人 |
NORTH AMERICAN PHILIPS CORP., SIGNETICS DIVISION |
发明人 |
DE JONG, JAN L.;DEGROOT, JACOB G. |
分类号 |
H01L21/285;H01L21/331;H01L21/336;H01L21/8248;H01L21/8249;H01L29/10 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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