发明名称 Temperature compensated overload trip level solid state relay
摘要 In solid state relay circuit including a metal oxide field effect transistor connected for switching current to a load circuit, a latch circuit including first and second transistors connected to monitor a voltage caused by current in the load circuit and to shunt current away from the field effect transistor in response to current overload in the load circuit, the first and second transistors having temperature characteristics such that they turn on in response to different voltages at different temperatures, the improvement including a second means for turning on the latch to shunt current away from the field effect transistor in response to the voltage caused by current in the load circuit, the second apparatus including temperature compensating apparatus for matching the temperature characteristics of the first and second transistors of the latch circuit whereby the latch turns on at the same voltage in the load circuit over the typical operating range of the device.
申请公布号 US5006949(A) 申请公布日期 1991.04.09
申请号 US19900516430 申请日期 1990.04.30
申请人 TELEDYNE INDUSTRIES, INC. 发明人 GUAJARDO, CIRO
分类号 H03K17/08;H02H3/087;H03K17/082;H03K17/14;H03K17/567;H03K17/78;H03K17/785 主分类号 H03K17/08
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