发明名称 |
Plasma assited MO-CVD of perooskite dalectric films |
摘要 |
Disclosed is a method of forming a Perovskite-type dielectric film on a substrate under low temperature by decomposing and reacting vapor of organometallic compound containing metal for the dielectric, vapor of organometallic compound containing titanium, and oxygen in a reduced-pressure and plasma.
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申请公布号 |
US5006363(A) |
申请公布日期 |
1991.04.09 |
申请号 |
US19890446767 |
申请日期 |
1989.12.06 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
FUJII, EIJI;TORII, HIDEO;AOKI, MASAKI |
分类号 |
C23C16/40 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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