| 摘要 |
PURPOSE:To accelerate a writing operation by providing a high resistance value part extended from an emitter electrode toward its collector region in the emitter region of a lateral pnp transistor. CONSTITUTION:A p<+> type impurity layer 8a of an emitter region of a lateral pnp transistor has a protrusion of plane T shape extended toward a p<-> type impurity layer 4 of a collector of the transistor. At least part of the extended part to the collector region side is enhanced at its resistance value. Therefore, a part to be operated as an emitter region is automatically altered according to the amplitude of an emitter current to set a current amplification factor betato small in a high current range and to large in a low current range. Accordingly, the writing operation of a resistance load type ECL.BAM can be accelerated, and the holding operation of a memory cell can be stabilized at a normal time. |
