| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit device adapted for miniaturization to obtain a sufficient amount of charge by arranging a capacity over the whole surface including the side face of a gate electrode through an insulating film, connecting one charge storage layer of the capacity to one of a diffused region, and insulating the other charge storage layer from any of the diffused regions. CONSTITUTION:In a semiconductor integrated circuit device having a MOS transistor connected at its gate electrode to a word line, and a capacity controlled to receive from and deliver charge to a digit line by turning ON, OFF the transistor, the transistor is formed by forming diffused regions 13 to become source, drain regions in a semiconductor base 10, and providing a gate electrode 15 to the regions 13 through a gate oxide film 14. The capacity is arranged over the whole surface including the side face of the electrode 15 through an insulating film 15a, one charge storage layer 20 of the capacity is connected to one of the regions 13, and the other charge storage layer 23 of the capacity is insulated from both the regions 13. |
