| 摘要 |
PURPOSE:To bond H with the dangling bonds of Ge, and to obtain an excellent amorphous film by scanning the surface of the formed film by a needle sharpened at an atomic level in a desired gas atmosphere while applying voltage between the needle and the film. CONSTITUTION:On the surface of a semiconductor composed of constituent elements of two elements or more, a needle 5, a tip of which is sharpened at an atomic level, is mounted to the surface of the semiconductor in a desired gas atmosphere, voltage is applied between the needle 5 and the semiconductor, the surface of the semiconductor is scanned by the needle while decomposing an atmospheric gas, and atoms decomposed from the gas are bonded with the surface of the semiconductor. a-SiGe...H is film-formed, and voltage is applied between the needle 5 and the film by a power supply 6 in a hydrogen atmosphere having high purity. Since the tip of the needle 5 is sharpened at the atomic level, the radius of curvature is reduced, and hydrogen is ionized easily even by the application of several V voltage. When the needle 5 is moved near the dangling bonds of Ge atoms 2, hydrogen ions 7 are bonded with the dangling bonds of Ge 2. The needle 5 is shifted by a micrometer and a piezo-element. |
