| 摘要 |
PURPOSE: To reduce a gate area resistance and to improve the operating characteristics of a multiple-cell field effect device for power by providing a field effect semiconductor structure, including an insulating gate electrode layer that is made of a laminated body of tungsten silicide/polysilicon/oxide. CONSTITUTION: The surface of one conductivity type semiconductor wafer 110 is oxidized and an oxide layer 130 is formed, a polysilicon layer 132 is formed on it, and further a tungsten silicide layer 134 is formed on it. Then, the laminated body of silicide/polysilicon/oxide being formed above is subjected to anisotropic etching, a tungsten silicide electrode layer 131 and an opening 170 are formed, an impurity is injected and diffused through the opening 170, and a channel region 118 and a source region 120 are formed in a self-aligned manner, thus forming an active semiconductor device 100 in a semiconductor wafer 110, and enabling the gate electrode layer 131 of the laminated body of tungsten silicide/polysilicon/oxide to have a low surface area resistance and an improved frequency response characteristic. |
