| 摘要 |
1,165,016. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 14 Nov., 1966 [3 Jan., 1966], No. 50902/66. Heading H1K. A beam of energy, e.g. an electron- or laserbeam, is pulsed on to the surface of a monocrystalline semi-conductor body 5, thereby forming projections 10, 11, 30 on the surface. Individual circuit components are then formed in each of the projections. It is stated that the projections 10, 11, 30 are formed by building up the semi-conductor material, rather than by removal of material from between the projections, and that they are epitaxial with the underlying substrate 8. Further material may subsequently be epitaxially deposited on to the projections to thicken them. As shown, the body 5 is of N+ type Si, Ge, or compound semi-conductor material, and after reaching the stage illustrated, an insulating layer of SiO 2 is deposited over the projections 10, 11, 30 and over the intervening surface of the substrate 8. Polycrystalline semi-conductor material is then formed over the insulating layer, and the monocrystalline body 5 is lapped and polished until only the projections remain, separated by SiO 2 , and supported by polycrystalline material. Individual components, e.g. transistors, resistors &c. are then formed in the remaining monocrystalline material by conventional techniques such as ion implantation, electron beam diffusion &c., through an oxide mask. Contacts are applied by depositing a metal film and selectively removing this film to leave only the required electrodes. |
