发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent the software error of an ECL circuit of the like without sacrificing the operating speed by absorbing negative pulse noise generated while the collector region of a differential transistor(TR) is irradiated with an alpha ray. CONSTITUTION:An input gate circuit RGI is provided with a couple of unit gate circuits (ECL circuits) GA, GB and each unit gate circuit uses a couple of differential TRs T1, T2 as its basic building block. Then noninverting output nodes n5, n11 and n6, n12 are coupled in common in the unit gate circuit to form the OR form. Thus, the collector region of the differential TRs T1, T2 is irradiated with an alpha ray or the like and even when a negative pulse noise to extract a high level is generated, it is absorbed. Thus, the software error of an ECL(Emitter Coupled Logic) circuit or the like is prevented without sacrificing the operating speed of the circuit.
申请公布号 JPH0382220(A) 申请公布日期 1991.04.08
申请号 JP19890217343 申请日期 1989.08.25
申请人 HITACHI LTD 发明人 ISHII SHUICHI;KIMURA TATSUYA
分类号 H03K3/286;H03K5/13;H03K5/133;H03K19/003;H03K19/086 主分类号 H03K3/286
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