| 摘要 |
<p>PURPOSE:To simplify the structure of the above matrix and to decrease the number of production processes by constituting discrete transparent electrodes of the silicon thin films continuous with the active layers of thin-film transistors and the metallic silicide thereon. CONSTITUTION:The active layer 103 consisting of the polycrystalline silicon film having a prescribed thickness is provided on a source region 101 and drain region 102 consisting of the polycrystalline silicon film doped with phosphorus at a high concn. A gate insulating film 104 consisting of a silicon dioxide film is provided on the active layer 103. A gate electrode and gate wiring consisting of chromium, a drain electrode and drain wiring 106, and a source electrode 107 are provided. A chromium silicide film 108 constitutes the discrete transpar ent electrodes together with the polycrystalline silicon film and indium tin oxide is not used at all. The structure is simplified in this way and the number of the process is decreased.</p> |
