MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To obtain a shallow or deep impurity introduction layer arbitrarily by a method wherein an electrode material is mounted on an oxide film of Si substrate surface to remove the oxide film and thereafter an ion implantation is provided therefor uniformly. CONSTITUTION:A polysilicon gate electrode 4 is formed on a gate oxide film 3 by using resist 5 and a polysilicon film 7 on a separating oixde film 2 is covered with resist 8 to surround around MOSEFT portion. When the oxide film 3 is removed and thereafter n type impurity ion is implanted, a shallow source-drain layer 6c and a deep diffusion resistance layer 6b are formed. According to such a constitution, the IC having the impurity layers of different depth can be obtained while eliminating a troublesome processing such as increasing of diffusion process or mask alignment, etc.