| 摘要 |
<p>A guard barrier or ring (10) is formed in a Schottky barrier device to overcome edge-leakage current problems. The guard barrier or ring (10) is formed at the edge of a region of low Schottky barrier height (2). In the case of a Schottky infrared detector having an infrared sensitive silicide layer (2) on a silicon substrate (3), the guard barrier (10) is formed by using a metal silicide layer of higher Schottky barrier height than that of the infrared sensitive silicide layer (2) or by using a metal which forms a metal/silicon junction having a higher barrier height than that of the infrared sensitive silicide layer (2).</p> |
