| 摘要 |
PURPOSE:To obtain characteristics adapted for a light emitting material in a semiconductor material capable of epitaxially growth by irregularly forming at least one of the number of atomic or molecular layers for forming a semiconductor layer in a thickness direction, composition of the specific molecular layer of the molecular layers and addition of impurity to the semiconductor layer. CONSTITUTION:A superlattice semiconductor material having a regular configuration with respect to a y-z plane and an irregularity in thickness direction is provided, and semiconductor materials having different energy band widths epsilong are sequentially deposited in irregular number of molecular layers on a GaAs substrate 10. For example, AlAs having 2.17eV of the epsilong and GaAs having 1.43eV of the epsilong are employed to form (AlAs)m(GaAs)n, a first layer is formed of an AlAs layer 12 of one molecular layer, a second layer is formed of GaAs layers 14 of two molecular layers, a third layer is formed of an AlAs layer 15 of one molecular layer, and a fourth layer is formed of GaAs layers 16 of three molecular layers. Thus, variation of kinetic amount at a local level is set to infinity , thereby enhancing energy transition probability. |
