| 摘要 |
<p>A method of direct microlithography by screening a substrate (2), such as silicon wafer, with an optical and/or electronic beam in order to photomecanically or electromechanically etch submicrometric structures on the surface of said substrate. The method is characterized in that the source of the optical and/or electronic etching beam is kept an appropriate distance away from the substrate by means of a proximity sensor with a waveguide, such as a fiber-optical proximity sensor (6), adapted to measure the rapid variations, according to said distance, in the intensity of an electromagnetic wave reflected by the substrate in the near field region located on the end (8) of said sensor. Microlithography devicces for implementing this method are also described.</p> |
