PRODUCTION OF THIN FILM TRANSISTOR ARRAY

摘要

PURPOSE:To prevent the electrical short circuiting between a picture element electrode and an additive capacity electrode by filling the pinholes generated in a gate insulating layer by electrodeposition of a heat resistant insulating resin prior to wiring of a source electrode in common use as a source line and the picture element electrode. CONSTITUTION:The picture element electrode 9 which is connected to a thin film transistor array and is impressed with a driving voltage for display is provided with the additive capacity electrode 10 facing this electrode via the gate insulating layer 4. The pinholes generated in the gate insulating layer 4 are filled by the electrodeposition of the heat resistant insulating resins 11a, 11b prior to the wiring of the source electrode 2 in common use as the source line and the picture element electrode 9. The electrical short circuiting between the source line or the picture element electrode and the additive capacity electrode is prevented in this way and the cost reduction is resulted by the improved yield of the product.