Semiconductor light-emitting device and method of fabricating the same.

摘要

A semiconductor light-emitting device comprises a light-emitting layer (10) including a pn junction formed by a plurality of InxGayA l 1-x-yP (0 </= x, y </= 1) layers, and a light-emitting-layer holding layer (15) consisting of an indirect transition type Ga1-wA l wAs (0 </= w </= 1) provided on an opposite side to a light-outputting side. The holding layer (15) has a sufficiently small light absorption coefficient for the light from the light-emitting layer (10) although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.