| 摘要 |
An apparatus for manufacturing a single crystal of compound semiconductor consisting of Ga and As comprises a crucible storing Ga and having a seed crystal arranged at a lower end portion thereof a gas material susceptor, arranged below the crucible, for storing As, the gas material susceptor and the crucible being arranged in a growth susceptor to be capable of communicating with each other, a main heater for heating and melting Ga in the crucible and for cooling the melt Ga from a lower portion thereof to grow a single crystal, a sub heater for heating and evaporating As in the gas material susceptor and allowing the evaporated As to react with the melt Ga in the said crucible, and a magnetic field applying coil for applying a vertical magnetic field in the melt Ga and As in the crucible so that a surface of the melt in the crucible which is grown to a single crystal is lower in temperature at a central portion thereof than a peripheral portion thereof in a radial direction and at the same time projects upward. |
