| 摘要 |
PURPOSE:To enable the densification and high integration without being influenced by imperfect mask adjustment by utilizing the etching characteristic difference between an insulating film and a flattered film formed on side walls of wiring layers. CONSTITUTION:A plurality of conductive layers 2, 3, two layers for example, are placed closely on a substrate 1, and the layers 2, 3 are fully covered with an insulating layer 8. On this layer 8 a polyimide film 9 of a flattened film having an etching characteristic different from that of the film 8 and an SOG film 10 are laminated, and they are etching-processed through the medium of a resist film 11. The film 8 having a different etching characteristic is not etched and the shape of the layers 2, 3 is protected. By removing parts of the film 8 corresponding to connecting holes by etching, electrodes can be formed well without being influenced by imperfect mask adjustment. Accordingly, it becomes possible to make semiconductor device densified and highly integrated easily and surely. |
