发明名称 PROCESS AND APPARATUS FOR MASK INSPECTION
摘要 <p>The apparatus for inspection of a mask for X-ray lithography or corpuscular, in particular ionic, ray lithography, where the mask has structures in the shape of areas impermeable to X-rays for X-ray lithography, and the mask has structures in the shape of perforations for corpuscular, in particular ionic, ray lithography, where a receiving stage 4, which is preferably designed as coordinate stage and/or is optionally rotatable and is provided with a perforation, for the mask 2 to be inspected is arranged in the ray path of a projection device for an inspection ray, in particular a corpuscular ray, for example a fine-focused electronic or ionic ray, and where an emitter surface 5 for secondary quanta or secondary radiation 6, resulting from the inspection rays passing through the areas permeable to X-rays or the openings 1 in the mask 2 lying on the receiving stage 4, and a detector 7 for the secondary quanta coming from the emitter surface 5 or the secondary radiation 6 coming from the emitter surface are arranged underneath the stage perforation 3, and where the signals of the detector 7 can be passed, where appropriate after modification, to an image store, is described. …<IMAGE>… </p>
申请公布号 EP0299951(A3) 申请公布日期 1991.04.03
申请号 EP19880890185 申请日期 1988.07.12
申请人 IMS IONEN MIKROFABRIKATIONS SYSTEME GESELLSCHAFT M.B.H. 发明人 WOLFF, EDUARD, PROF. DR.;HAMMEL, ERNST, DR.;TRAHER, CHRISTIAN
分类号 H05G1/00;G01N23/225;G03F1/20;G03F1/22;G03F1/86;H01L21/027;(IPC1-7):G03F1/00 主分类号 H05G1/00
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