Method of storing analogue values and device for its implementation.

摘要

The method of the invention is applicable to a non-volatile memory cell having a MOS transistor structure with insulated floating gate, a control electrode coupled capacitively to the floating gate and an injection zone separated from the floating gate by an injection oxide and capable of injecting or extracting charges into or from the floating gate. The method is characterised in that the control electrode is subjected to an a.c. voltage of decreasing amplitude and in that the injection zone is subjected to a voltage representing the value to be stored. The invention applies to the storing of analog values. <IMAGE>