发明名称 LOW-MELTING POINT GLASS SEALED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>A low-melting point glass sealed semiconductor device comprises a pair of ceramic substrates (1, 2), each of which is shaped like an arch. The ceramic substrates (1, 2) are overlaid with each other, in such a manner as to define a space (8) between them. Through this space (8), a gas generated from a thermosetting mounting agent (9) used for adhesion is guided to the outside of the semiconductor device.</p>
申请公布号 EP0409004(A3) 申请公布日期 1991.04.03
申请号 EP19900112857 申请日期 1990.07.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAHATA, MASAMITSU, C/O INTELLECTUAL PROPERTY
分类号 H01L23/02;H01L21/58;H01L23/10;H01L23/13;(IPC1-7):H01L21/58 主分类号 H01L23/02
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